CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the OD-663-850 near-infrared LED illuminator with total power output from 300 to 425 milliwatts for high-power, near-infrared illumination tasks.
The narrow-angle-of-emission OD-110L and the wide-angle-of-emission OD-110W are ultra-high-power aluminum gallium arsenide (GaAlAs) near-infrared emitters with uniform optical beams and peak emission wavelengths of 850 nanometers. These devices are designed to operate in extreme temperatures and rugged conditions.
Other infrared LED products, such as the narrow-angle OD-110LISOLHT and the wide-angle OD-110WISOLHT operate at 880 nanometers with a spectral bandwidth of 55 nanometers (typical). These high-power infrared emitters feature wide temperature ratings and convenient two-lead TO-39 cans with isolated cases for high-temperature lighting tasks.
The company recently introduced the highest output power available OD-669 GaAlAs IRLED illuminator with an extremely wide angle of emission. The electro-optical device is in a TO-66 package for heat sink attach, and is designed with nine chips connected in series.
The device has an electrically isolated case to covert aircraft lighting and covert anti-collision lighting in aviation applications. For more information contact Opto diode online at https://optodiode.com.
