WEST PALM BEACH, Fla. – Solitron Devices Inc. in West Palm Beach, Fla., is introducing the SD11710 high-reliability metal-oxide-semiconductor field-effect transistors (MOSFETs) and military-grade 700-volt silicon carbide (SiC) device for demanding industrial, aerospace, and defense applications.
Packaged in a rugged hermetically sealed TO-258, the SD11710 provides RDS(on) 50 amps of continuous-drain current. Devices that can operate in temperatures as hot as 200 degrees Celsius are available on request.
Key features include low capacitances and low gate charge; fast switching speed due to low internal gate resistance; stable operation at high junction temperature; fast and reliable body diode; and avalanche ruggedness.
Silicon carbide provides switching performance versus silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature.
Higher efficiency levels than silicon from relatively low energy loss and reverse charge results in more switching power and less energy required in the switch-on and switch-off phase. Combined with high switching frequencies this translates to smaller magnetics to reduce weight and size.
Rugged packaging combined with high temperature operation make the SD11710 suitable for demanding power supply and motor control applications that require small size, light weight, and high efficiency.
For more information contact Solitron Devices online at https://solitrondevices.com.