EL SEGUNDO, Calif. – Efficient Power Conversion Corp. (EPC) in El Segundo, Calif., is introducing two 40-volt-rated radiation-hardened gallium nitride (GaN) field-effect transistors (FETs) for high-reliability and space applications.
The EPC7001 is a 40-volt 4-milliohm, 250-amp rad-hard GaN FET in a 7-square-millimeter footprint. The EPC7002 is a 40-volt, 14.5-milliohm, 62-amp rad-hard GaN FET in a 1.87-square-millimeter footprint.
Both power electronics devices have a total dose radiation rating greater than 1,000 kilorads and single-event-effect (SEE) immunity for LET of 83.7 MeV/mg/cm2 with VDS to 100 percent of rated breakdown. These devices come in chip-scale packages.
EPC’s eGaN FETs and integrated circuits offer a higher performing alternative to conventional radiation-hardened silicon devices for high reliability and space applications, company officials say.
EPC’s rad-hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad hard silicon devices. Moreover, EPC’s rad hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.
Applications benefiting from the performance and fast deployment of these devices include DC-DC power converters, motor drives, lidar, deep probes, and ion thrusters for space applications. They are particularly well-suited for satellites operating in both Low Earth Orbit (LEO) and Geosynchronous Earth Orbit (GEO), as well as avionics systems.
“The Rad Hard product family provides unparalleled performance and reliability, coupled with significant space heritage for more efficient and robust systems covering a wide range of applications in harsh environments, such as space and other high reliability military applications”, says Alex Lidow, CEO, and co-founder of EPC.
For more information contact Efficient Power Conversion Corp. online at https://epc-co.com/epc/.
