The ultra-fast 1200 V IGBTs use thin-wafer, Field-Stop Trench technology to reduce switching and conduction losses, as well as to deliver higher power density and greater efficiency at higher frequencies. IR engineers optimized the devices for applications that do not require short-circuit capability and complement IR’s products with 10-microsecond, short-circuit capability for motor drive applications.
“Featuring a range of performance benefits, IR’s new family of ultra-fast 1200 V Trench IGBTs offer higher system efficiency, while cutting switching losses and delivering higher switching frequencies reduces heat sink size and magnetic component count to lower overall system cost,” says Llewellyn Vaughan-Edmunds, IGBT product marketing manager, IR’s Energy Saving Products Business Unit.
Features include wide square reverse bias safe operating area (RBSOA), positive VCE(on) temperature coefficient, and low VCE(on) to reduce power dissipation and achieve higher power density. Devices are available with or without an internal ultra-fast soft recovery diode. Die products are available with solderable front metal (SFM) for improved thermal performance, reliability and efficiency.
IRG7PH35UPBF pricing starts at $3 each (U.S.) in 10,000-unit quantities.