Vishay launches TrenchFET power MOSFET

MALVERN, Pa., 22 Aug. 2009. Vishay Intertechnology Inc. unveiled a power MOSFET with low on-resistance for a 60-volt device in a package with double-sided cooling. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-volt gate drive, a 13 percent improvement over the next best comparable device on the market.

MALVERN, Pa., 22 Aug. 2009. Vishay Intertechnology Inc. unveiled a power MOSFET with low on-resistance for a 60-volt device in a package with double-sided cooling. The new SiE876DF, which comes in an SO-8 sized PolarPAK package, boasts maximum on-resistance of 6.1 milliohms at a 10-volt gate drive, a 13 percent improvement over the next best comparable device on the market.

The n-channel SiE876DF is targeted at power supplies, motor control circuits, AC/DC power supplies for servers and routers, and systems using point-of-load (POL) power conversion. It will also be used as a primary side switch or for secondary side rectification in higher voltage intermediate bus conversion (IBC) designs.

The low on-resistance of the SiE876DF will translate into lower conduction losses and save energy. In addition to the low conduction losses provided by its TrenchFET silicon, the double-sided cooling provided by the PolarPAK package enables better thermal performance for high-current applications. This allows for operation with a lower junction temperature.

The PolarPAK's leadframe-based, encapsulated design also offers increased protection and reliability, in addition to simplifying manufacturing, since the die is not exposed, says a representative. The device offers the same layout as other PolarPAK devices with a drain-source voltage rating under 150V, thus simplifying PCB design.

Samples and production quantities of the SiE876DF 60-volt are available now, with lead times of 10 to 12 weeks for larger orders.

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