SiC MOSFET power modules for motor control in aerospace and defense uses introduced by Microsemi

ALISO VIEJO, Calif. – Microsemi Corp. in Aliso Viejo, Calif., is introducing the SP6LI silicon carbide (SiC) metal oxide silicon field-effect transistor (MOSFET) power modules for switch mode power supplies and motor control in aerospace and defense, industrial, automotive, and medical applications.

By Mil & Aero staff
By Mil & Aero staff

ALISO VIEJO, Calif. – Microsemi Corp. in Aliso Viejo, Calif., is introducing the SP6LI silicon carbide (SiC) metal oxide silicon field-effect transistor (MOSFET) power modules for switch mode power supplies and motor control in aerospace and defense, industrial, automotive, and medical applications.

The power modules come in extremely low-inductance packages dedicated to high current low specific on-resistance (RDSon). The package, developed for the company's SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as well as high efficiency.

Microsemi's SP6LI product family has five standard modules, offering phase leg topology ranking from 1200 volts at 210 to 586 amps at a case temperature of 80 degrees Celsius to 1700 volts at 207 amps at a case temperature of 80 degrees Celsius.

Offering high power density and a compact form factor, the package enables lower quantity of modules in parallel to achieve complete systems, helping customers to further downsize their equipment.

Applications for Microsemi's SP6LI power modules include aircraft actuation systems; power generation systems; electric vehicle and hybrid electric vehicle (EV/HEV) powertrain and kinetic energy recosystems (KERSs); and switched mode power supplies in induction heating, medical power supplies, and electrification of trains.

Related: Power conversion board for energy storage applications introduced by Analog Devices and Microsemi

The SP6LI power modules have a phase leg topology made of SiC power MOSFETs and SiC Schottky diodes, and offer an extremely low RDSon down to 2.1 mOhms per switch and an internal thermistor for temperature monitoring.

They also offer screw-on terminals for both signal and power connections, as well as isolated and high thermal conductivity substrates (Aluminum Nitrate as a standard and Silicon Nitride as an option) for improved thermal performance.

In addition, the standard copper base plate can be replaced as an option with Aluminum Silicon Carbide (AlSiC) material enabling higher power cycling capabilities.

For more information contact Microsemi online at www.microsemi.com.

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