GaN RF and microwave amplifier for X-Band pulsed radar applications introduced by Comtech PST

MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BMPC9X89X8-8000 gallium nitride (GaN) RF and microwave amplifier for X-Band pulsed radar applications.

By Mil & Aero staff
By Mil & Aero staff

MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BMPC9X89X8-8000 gallium nitride (GaN) RF and microwaveamplifier for X-Band pulsed radar applications.

The AB linear design operates from 9.0 to 9.9 GHz frequency range over any instantaneous bandwidth of 500 MHz, and is for ruggedized radar applications.

The amplifier design features self protection for load voltage standing wave ration (VSWR), duty factor, pulse width, temperature, as well as a graceful degradation in case of an RF power module failure.

Custom configurations and features are available as well as specific power levels to 16 kilowatts.

The pulsed amplifier features class AB GaN technology; high-output power dynamic range; efficiency; RF input and output sample detectors; pulse width and duty factor protection; thermal and load VSWR protection; remote status and control interface (Ethernet); ruggedized for harsh environments; customization available; RF modular combining 2 to 16 kilowatts; internal AC power supply; and graceful degradation.

The unit measures 19 by 12.25 by 24 inches, and weighs 90 pounds. For more information contact Comtech PST online at www.comtechpst.com.

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