Summary points:
- 1200 V CoolSiC MOSFETs in top-side-cooled Q-DPAK package boost performance for EV chargers, solar inverters, UPS systems, motor drives, and solid-state circuit breakers.
- As much as 25 percent lower switching losses than previous generation, improving system efficiency by as much as 0.1 percent.
- Enhanced thermal design with top-side cooling for heat dissipation, low parasitic inductance, and reduced voltage overshoot risk.
MUNICH – Infineon Technologies AG in Munich is introducing the CoolSiC 1200 V G2 metal oxide semiconductor field-effect transistors (MOSFETs) in a top-side-cooled Q-DPAK package for demanding industrial applications like electric vehicle chargers, solar inverters, uninterruptible power supplies, motor drives, and solid-state circuit breakers.
The devices deliver optimized thermal performance, power efficiency, and power density, and offer significant improvements over the previous generation, enabling as much as 25 percent lower switching losses for equivalent RDS(on) devices, thereby increasing system efficiency by as much as 0.1 percent.
Two Q-DPAK configurations
The CoolSiC 1200 V G2 MOSFETs are available in two Q-DPAK configurations: one switch and a dual half-bridge, and offer a standardized package height of 2.3 millimeters across all top-side-cooled variants.
The Q-DPAK package enhances thermal performance by enabling heat dissipation from the device’s top surface to the heat sink, which offers better heat transfer efficiency compared to traditional bottom-side cooled packages.
The Q-DPAK package enables minimized parasitic inductance to enhance efficiency and reduce voltage overshoot risk. For more information contact Infineon Technologies online at www.infineon.com/products/power/mosfet/silicon-carbide/discretes.
