Gallium nitride (GaN) foundry services for high-power industrial and medical applications offered by X-FAB

Summary points:

• X-FAB introduces GaN-on-Si processing for high-power dMode devices at its Dresden facility, enabling advanced power-conversion applications.
• In addition to GaN, X-FAB offers SiC technologies, supporting a range of industries including automotive, data centers, and renewable energy.
• X-FAB's Dresden fab is equipped with cutting-edge tools for handling thick GaN wafers, optimizing production for high-frequency, high-power applications like medical and industrial devices.

ERFURT, Germany – X-FAB Silicon Foundries SE in Erfurt, Germany, is introducing GaN-on-Si foundry services for dMode devices using gallium nitride (GaN) processing technology for high-power applications.

X-FAB offers processing technologies for GaN and other wide-bandgap materials such as silicon carbide (SiC) to help fabless semiconductor companies bring their designs to life.

X-FAB provides the GaN-on-Si technology from its 8-inch fab in Dresden, Germany, one of the company's six production facilities. Dresden foundry services offer specialized processing equipment, measurement tools, and technologies that are optimized for GaN development and production.

GaN-optimized foundry tools

Tools are optimized to handle thick GaN-on-Si wafers for high-power automotive, data center, industrial, renewable energy, and medical applications.

The company's in-house expertise extends to GaN-on-Si foundry services for dMode devices. The process includes dMode HEMT transistors (scalable from 100 to 650 volts), often used in power -conversion applications.

In addition, X-FAB offers GaN technologies including dMode, eMode HEMTs as well as Schottky Barrier Diodes for high-frequency rectification, power supply, and solar panel applications.

For more information contact X-Fab Silicon Foundries online at www.xfab.com.