2025 MAE Innovator Awards: IR HiRel Rad-Hard JANS GaN HEMT

IR HiRel sets a new milestone by launching the 1st internally fabricated rad-hard GaN transistor with JANS qualification. At 100V and a TID rating of 500krad, the device delivers robust power and radiation performance, recognized by MAE as a Platinum Innovator Award winner. Packaged in Infineon’s new PowIR-SMD, the HEMT is small and lightweight, ideal for systems with tight size and weight requirements.