ALLEN, Texas, 12 June 2015. Fairview Microwave Inc. in Allen, Texas, is introducing a family of coaxial LNA and high power X band RF and microwave amplifiers for commercial and military radar systems, satellite communication systems, terrestrial communications and networking, medical accelerators, and test and measurement setups.
These RF and microwave devices commonly are for front-end receivers and as driver amplifiers or high power output amplifiers. The RF and microwave devices exhibit high gain and are for high-linearity applications with frequencies that cover 8 to 12 GHz.
Gain levels range from 30 to 41 dB over a temperature of -30 and 70 degrees Celsius. The gain flatness ranges from plus-or-minus 0.50 dB to plus-or-minus 1.0 dB and the IP3 output performs to +45 dBm. It exhibits a noise figure of 2.2 dB and come in 1- and 4-Watt designs.
The power amplifiers are in hermetically-sealed metal enclosures and exhibit performance for low noise, high gain, gain flatness, high linearity and wide dynamic range.
This performance comes from using hybrid microwave integrated circuit designs and advanced gallium arsenide pseudomorphic high-electron-mobility transistor (GaAs pHEMT) technology, Fairview officials say.
The connectorized SMA amplifier modules are unconditionally stable and include built-in voltage regulation, bias sequencing, and reverse bias protection for added reliability. These RF amplifiers have over-voltage protection that's installed externally for easy repair.
For more information contact Fairview Microwave online at www.fairviewmicrowave.com.