Gallium nitride power amplifiers for X-band radar applications introduced by Comtech PST

MELVILLE, N.Y., 13 April 2016. Comtech PST Corp. in Melville, N.Y., is introducing the AB linear design of gallium nitride (GaN) power amplifiers for X-band radar applications.

By Mil & Aero staff
By Mil & Aero staff

MELVILLE, N.Y., 13 April 2016. Comtech PST Corp. in Melville, N.Y., is introducing the AB linear design of gallium nitride (GaN) power amplifiers for X-band radar applications.

The AB linear design operates over the 9.2-to-10 GHz radar frequency range, and has phase- and amplitude-control options for use in high-power systems that use conventional binary or phased array combining approaches for power levels to 10 kilowatts.

The amplifiers have pulse width and duty factor protection; thermal and load voltage standing wave ratio (VSWR) protection; optional digital interface for control and status monitoring; optional phase and amplitude control; and is a suitable building block for phased array systems.

The power electronics devices have peak output power of 1000 Watts of power gain of 60 db nominal power gain variation: of ±2 db (9.2-10 GHz); width of 0.25 to 100 microseconds; max duty cycle of 10 percent; max pulse droop of less than 0.5 db; and pulse rise and fall time of less than 60 nanoseconds.

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The AB linear design has a typical input VSWR of less than 1.5:1; output load VSWR of less than 2:1; DC voltage input of 28 volts DC; and operates in temperatures from zero to 55 degrees Celsius.

These devices measure 9.6 by 6.8 by 2.15 inches and weigh 5 pounds. For more information contact Comtech PST online at www.comtechpst.com.

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