RF Micro Devices qualifies gallium nitride fab to 65-volt operation to support civil and military radar

BALTIMORE, 7 June 2011. RF Micro Devices Inc. RF Micro Devices Inc. in Greensboro, N.C., has qualified its gallium nitride (GaN) semiconductor process technology for 65-volt operation to fabricate efficient miniature half-kilowatt power semiconductors with high operating efficiency for L- and S-band military and civilian radar applications.

BALTIMORE, 7 June 2011. RF Micro Devices Inc. RF Micro Devices Inc. in Greensboro, N.C., has qualified its gallium nitride (GaN) semiconductor process technology for 65-volt operation to fabricate efficient miniature half-kilowatt power semiconductors with high operating efficiency for L- and S-band military radar, as well as and civilian radar applications.

The company's GaN semiconductor process is qualified not only to support the company's GaN-based power semiconductor product designs and , but also to make the process available to other companies through the RF Micro Devices Foundry Services business unit. RF Micro Devices made the announcement today at the International Microwave Symposium 2011 conference and trade show in Baltimore.

Before now, RF Micro Devices's GaN power semiconductor process had been qualified only for 48-volt operation. Moving to 65 volts will help systems and component designers build small periphery die for high power applications, explains Bob Van Buskirk, president of the RF Micro Devices Multi-Market Products Group.

For more information contact RF Micro Devices online at www.rfmd.com.

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