EWING, N.J., 30 Oct. 2009. Discovery Semiconductors Inc. in Ewing, N.J., is introducing highly linear photodiodes DSC100S for RF-over-fiber applications operating DC to 6 GHz.
Scientists at the U.S. Defense Advanced Research Projects Agency (DARPA) in Arlington, Va., provided partial funding for developing these photodiodes, which work at 1310- and 1550-nanometer wavelengths.
"High linearity photodiode technology is important for a myriad of defense applications including antenna remoting, opto-electronic microwave oscillators, filters and channelizers, and other aperture interface functions," says Dr. Ron Esman, the MTO program manager at DARPA.
These photodiodes have a nominal third-order output intercept point (OIP3) of more than 45 dBm and second order output intercept point (OIP2) of more than 55 dBm for DC photocurrents in excess of 30 milliamps.
"These devices will mainly serve various commercial RF-over-fiber market segments that improve wireless coverage in dead zones such as city subways, mines, tunnels, interiors, and basements of buildings," says Joshi, president & chief executive officer of Discovery Semiconductors.
Some of the intended usage will be for fiber distribution of signals such as GPS, GSM, CDMA, WiMax, and the LTE. For more information contact Discovery Semiconductors online at www.chipsat.com.
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