CHELMSFORD, Mass., 19 Nov. 2006. Hittite Microwave Corp. in Chelmsford, Mass., is introducing two RF and microwave components for military, space, microwave radio, industrial, test-equipment, and medical applications.
The HMC564LC4 and the HMC565LC5 are surface-mount technology (SMT)-packaged gallium arsenide pseudomorphic high-electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) low-noise amplifiers for applications that operate from 6 to 20 GHz. The devices operate from 3-volt power supplies and require no external matching.
The HMC564LC4 is rated from 7 to 14 GHz, and features low 1.8 dB noise figure, high output IP3 of +25 dBm, and 17 dB small signal gain, and is housed in a RoHS compliant 4-by-4-millimeter leadless SMT package.
The HMC565LC5 is rated from 6 to 20 GHz and delivers 2.4 dB noise figure, +20 dBm output IP3, and 21 dB small signal gain, and is housed in a RoHS-compliant 5-by-5-millimeter leadless SMT package. Both devices consume less than 75 milliamps of power and feature DC blocked I/Os.
For hybrid MCI and ACM assembly applications, these self biased low-noise amplifiers are also available in die form as the HMC564 and the HMC565.
For more information contact Hittite Microwave Corp. online at www.hittite.com.
