RF Micro Devices to deliver GaN PowerIC broadband power amplifiers to military supplier for software defined radios

GREENSBORO, N.C., 26 Jan. 2007. RF Micro Devices Inc., a designer and manufacturer of high-performance radio systems and solutions for applications that drive mobile communications, has received its first purchase order from a top-tier military supplier for a new product using RFMD's gallium nitride (GaN) high electron mobility transistor (HEMT) process technology.

GREENSBORO, N.C., 26 Jan. 2007.RF Micro Devices Inc., a designer and manufacturer of high-performance radio systems and solutions for applications that drive mobile communications, has received its first purchase order from a top-tier military supplier for a new product using RFMD's gallium nitride (GaN) high electron mobility transistor (HEMT) process technology.

RFMD's GaN technology can operate over a wide range of microwave frequencies, making it ideal for multiple band and broadband applications. The purchase order is the first received by RFMD for its GaN power amplifiers.

The purchase order is for RFMD's RF3825 Power Integrated Circuit (PowerIC) broadband power amplifier, which is a 15-watt device capable of servicing a frequency band from 200MHz to 1.9GHz. The RF3825 enhances the bandwidth of software defined radios for military communications.

RFMD is manufacturing its proprietary GaN technology in its high-volume manufacturing facility in Greensboro, N.C.

RFMD expects to announce future advancements in GaN technology in 2007, including the availability of high power amplifiers (HPAs) featuring high linearity, wide bandwidth and power outputs up to 200 watts.

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