GaAs MMIC low-noise RF amplifier for radar, communications, SATCOM introduced by Custom MMIC

CHELMSFORD, Mass. – Custom MMIC in Chelmsford, Mass., is introducing the CMD241P4 packaged version of its CMD241 ultra-wideband gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) distributed low noise amplifier for use in L-, S-, C-, X-, Ku-, and K-band wideband radar, broadband microwave/millimeter wave communications, SATCOM, and test and measurement instrumentation RF and microwave applications.

By Mil & Aero staff
By Mil & Aero staff

CHELMSFORD, Mass. – Custom MMIC in Chelmsford, Mass., is introducing the CMD241P4 packaged version of its CMD241 ultra-wideband gallium arsenide monolithic microwave integrated circuit (GaAs MMIC) distributed low noise RF amplifier for use in L-, S-, C-, X-, Ku-, and K-band wideband radar, broadband microwave/millimeter wave communications, SATCOM, and test and measurement instrumentation RF and microwave applications.

The CMD241P4 exhibits gain greater than 13 dB with a low noise figure of 2.3 dB. The gain and noise figure of this distributed amplifier are stable over temperature, from -55 to 85 degrees Celsius.

The CMD241P4 demonstrates a 1 dB compression point beyond +21 dBm at 11 GHz and an output IP3 of +28 dBm, operating off a positive 3-to-8-volt power supply, with a current draw of 74 mA. The input return loss is typically 13 dB, and output return loss of 15 dB.

The distributed amplifier comes in a lead-free RoHs compliant 4x4 QFN plastic package. Also incorporated into the design of this MMIC is a 50 Ohm matched impedance at the input and output ports, which removes the need for both external DC blocks and RF matching.

For more information contact Custom MMIC online at www.custommmic.com.

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