Design support for 65-volt wideband RF power LDMOS for sub-GHz uses offered by Richardson RFPD

GENEVA, Ill. – Richardson RFPD Inc. in Geneva, Ill., is offering design support capabilities for the MRFX1K80H 65-volt wideband RF power laterally diffused metal oxide semiconductor (LDMOS) from NXP Semiconductors for sub-GHz aerospace and mobile radio applications.

Oct 31st, 2017
By Mil & Aero staff
By Mil & Aero staff

GENEVA, Ill. – Richardson RFPD Inc. in Geneva, Ill., is offering design support capabilities for the MRFX1K80H 65-volt wideband RFpower laterally diffused metal oxide semiconductor (LDMOS) from NXP Semiconductors for sub-GHz aerospace and mobile radio applications.

The device is designed to deliver 1800 Watts CW at 65 volts for applications from 1.8 to 400 MHz and is capable of handling 65:1 voltage standing wave ratio (VSWR).

Available in an air cavity ceramic package, it is a high-ruggedness transistor for use from 1.8 to 400 MHz. Additional key features of the MRFX1K80H include single-ended or in a push-pull configuration; qualified to a maximum of 65 VDD operation; and characterized from 30 to 65 volts for extended power range.

The device also offers high breakdown voltage for enhanced reliability; suitable for linear application with appropriate biasing; integrated ESD protection with greater negative gate-source voltage range for improved Class C operation; and included in NXP product longevity program with assured supply for a minimum of 15 years after launch.

For more information contact Richardson RFPD online at www.richardsonrfpd.com.

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