EL SEGUNDO, Calif. –RF and microwave specialist Integra Technologies Inc. in El Segundo, Calif., is introducing the IGT5259L50 fully matched gallium nitride (GaN) on silicon carbide (SiC) transistor for pulsed C-band radar applications that require immediate full power and high gain.
The IGT5259L50 high-power GaN-on-SiC HEMT transistor offers 50 Watts at 5 to 6 GHz, and matches to 50 Ohms and supplies 50 Watts of peak pulsed output power at 50-volt drain bias.
This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response, and features 14 dB of gain, and 43 percent efficiency at 1 millisecond at 15 percent pulse conditions.
The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides thermal dissipation, and measures 0.8 inches wide and 0.4 inches long.
It is 100 percent high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is with a chip and wire approach by expert certified assemblers.
For more information contact Integra Technologies online at www.integratech.com.
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