RF and microwave GaN-on-SiC transistor for C-band radar applications introduced by Integra Technologies

EL SEGUNDO, Calif. – RF and microwave specialist Integra Technologies Inc. in El Segundo, Calif., is introducing the IGT5259L50 fully matched gallium nitride (GaN) on silicon carbide (SiC) transistor for pulsed C-band radar applications that require immediate full power and high gain.

By Mil & Aero staff
By Mil & Aero staff

EL SEGUNDO, Calif. –RF and microwave specialist Integra Technologies Inc. in El Segundo, Calif., is introducing the IGT5259L50 fully matched gallium nitride (GaN) on silicon carbide (SiC) transistor for pulsed C-band radar applications that require immediate full power and high gain.

The IGT5259L50 high-power GaN-on-SiC HEMT transistor offers 50 Watts at 5 to 6 GHz, and matches to 50 Ohms and supplies 50 Watts of peak pulsed output power at 50-volt drain bias.

This product covers the frequency range 5.2 to 5.9 GHz with instantaneous response, and features 14 dB of gain, and 43 percent efficiency at 1 millisecond at 15 percent pulse conditions.

The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides thermal dissipation, and measures 0.8 inches wide and 0.4 inches long.

It is 100 percent high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is with a chip and wire approach by expert certified assemblers.

For more information contact Integra Technologies online at www.integratech.com.

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