GaN-on-SiC RF and microwave transistors for S-band radar applications introduced by Integra Technologies

EL SEGUNDO, Calif. – Integra Technologies Inc. in El Segundo, Calif., is introducing a pair of 135- and a 130-Watt gallium-nitride-on-silicon-carbide (GaN-on-SiC) RF and microwave transistors for S-band radar applications.

By Mil & Aero staff
By Mil & Aero staff

EL SEGUNDO, Calif. – Integra Technologies Inc. in El Segundo, Calif., is introducing a pair of 135- and a 130-Watt gallium-nitride-on-silicon-carbide (GaN-on-SiC) RF and microwavetransistors for S-band radar applications.

The IGT2731M130 is a 50-Ohm matched high-power GaN high-electron-mobility transistor (HEMT), supplying a minimum of 130 Watts of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55 percent, at pulse conditions of 300 microseconds at 10 percent duty cycle.

It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.

The IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying as much as 135 Watts of peak pulsed power. This transistor also is a 50-Ohm matched high-power GaN HEMT transistor and also is a depletion-mode device that requires a negative gate bias voltage and bias sequencing.

Both products come in Integra’s package PL44A1 that measures 0.8 inches wide and 0.4 inches long. Earless, they are 0.4 inches wide and 0.4 inches long. Assembled via chip and wire technology with gold metallization, both units come in metal-based packages and are sealed with a ceramic-epoxy lid.

For more information contact Integra Technologies online at www.integratech.com.

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