Infrared light-emitting diode (IRLED) for covert aircraft lighting applications introduced by Opto Diode

May 2, 2022
The OD-669 is a high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator with a peak emission of 880 nanometers with wide angle of emission.

CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the OD-669 infrared light-emitting diode (IRLED) for covert aircraft lighting or covert anti-collision lighting in aviation applications.

The OD-669 comes in a TO-66 package for heat sink attach, and is a high-power gallium aluminum arsenide (GaAlAs) IRLED illuminator with a peak emission of 880 nanometers with wide angle of emission.

Designed with nine chips connected in series, the robust device for covert aircraft lighting and anti-collision is housed in an electrically isolated case for covert aircraft lighting. Total power output ranges from a minimum of 390 milliwatts to a typical level of 500 milliwatts under test conditions at 300 milliamps.

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The spectral bandwidth at 50 percent is 80 nanometers, and the half-intensity beam angle typically is 120 degrees for covert aircraft lighting and anti-collision applications. The forward voltage of the OD-669 ranges from a typical level of 13.5 volts to a maximum of 15 volts.

The reverse breakdown voltage is a minimum of 5 volts and 30 volts typical. Capacitance is 11 picofarads, and the rise and fall time typically is 3 microseconds.

Thermal parameters of the infrared light-emitting diode (IRLED) include the storage and operating temperature ranges of -55 to 100 degrees Celsius and the maximum junction temperature of 100 C.

For more information contact Opto Diode online at https://optodiode.com/pdf/OD669DS.pdf.

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