CAMARILLO, Calif. – Opto Diode Corp. in Camarillo, Calif., is introducing the AXUV100G electron detection device designed for use in radiation-detection applications.
The device offers a 100-by-100-millimeter active area, and its electron photodetector features electron responsivity at energy levels as low as 100 ectronvolts (eV).
The shunt resistance is a minimum of 20 milliohms, and its reverse breakdown voltage is 5 volts minimum and 10 volts typical. Its capacitance is 5 nanofarads (nF) typical, and its rise time is a maximum of 10 microseconds.
Ambient storage and operating temperatures for this electron detection device range from -10 to 40 degrees Celsius nitrogen or vacuum storage, and operating temperatures range from -2 to 80C. The lead soldering temperature for the UV device is 260C.
For more information contact Opto Diode online at https://optodiode.com/products-photodiodes.html. Download the data sheet at https://optodiode.com/pdf/AXUV100GDS.pdf.
