The gallium nitride (GaN)-based 6-18GHz RF amplifier expands on the company's integrated RF GaN power amplifier designs by increasing the RF power density.
The power electronics device offers ultra-wideband operation; high efficiency; full power across the bandwidth. The amplifier has RF power output of more than 50 Watts; 44 decibel gain at 50 Watts; RF input overdrive of +10 dBm; voltage standing wave ratio (VSWR) of 2.0:1 maximum; and DC to RF efficiency of 13 percent.
The unit has built-in test, with composite fault indication, over-current fault, and over-temperature fault. It has 7-pin combination D DC control interface, and runs on 15 Watts of power at standby.
It measures 6.13 by 3.5 by 1.5 inches, weighs 3 pounds, and operates in temperatures from -40 to 55 degrees Celsius. For more information contact Comtech PST online at www.comtechpst.com.