The MAAP-015036 RF and microwave is a two stage 8.5-to-10.5 GHz gallium arsenide (GaAs) MMIC power amplifier with saturated pulsed output power of 42 dBm, signal gain of 17 dB and typical 43 percent power added efficiency.
The power amplifier can be biased using a direct gate voltage or using an on-chip gate bias circuit. The device also offers dual sided bias architecture for optimum flexibility in assembly and board design.
For more information contact M/A-COM Technology Solutions online at www.macom.com.
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