EL SEGUNDO, Calif. -- Integra Technologies has announced a new IFF avionics transistor that offers 120W peak power output using GaN/SiC technology.
The unit, IGN1011L120, is a high-powered GaN transistor designed for use in Class AB operation. The company said it operates at 1.03-1.09 GHz, with a 50V bias voltage and 6.4 percent duty factor.
The units are assembled via chip and wire technology with gold metallization, and housed in a metal-based package sealed with a ceramic-epoxy lid.
Integra Technologies said the transistors are 100 percent high power RF tested for new design, and have 17dB of gain and a drain efficiency of 75 percent at ELM Mode S pulse conditions: 48x (32us On, 18us Off), 6.4% percent duty cycle.
For more information, visit Integra Technologies' website here.
