Upgraded ceramic MOSFET devices introduced by Infineon

June 9, 2021
Power electronics MOSFETs come with aluminum nitride ceramic for solar systems, uninterruptible power supplies, auxiliary inverters, and energy storage.

MUNICH - Infineon Technologies AG in Munich is introducing upgraded FF11MR12W1M1_B70 and FF6MR12W2M1_B70 EasyDUAL CoolSiC high-performance MOSFET ceramic modules with an aluminum nitride (AIN) ceramic for power electronics in solar systems, uninterruptible power supplies, auxiliary inverters, energy storage systems and electric vehicle chargers.

The 1200-volt power devices come in half-bridge configuration with an on-state resistance (R DS(on)) of 11 mO in an EasyDUAL 1B package and 6 mO in an EasyDUAL 2B package.

The EasyDUAL modules have CoolSiC metal oxide silicon field-effect transistor (MOSFET) technology that features superior gate-oxide reliability. With the improved thermal conductivity of the DCB material, the thermal resistance to the heat sink (R thJH) can be lowered by as much as 40 percent.

Combined with the CoolSiC Easy modules, the AIN ceramic enables an increase of the output power or reduces the junction temperatures, which can improve the lifespan of the system.

More information is online at www.infineon.com/easy.

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