Silicon photodiodes for blocking near-infrared introduced by OSI

OSI Optoelectronics, an OSI Systems company in Hawthorne, Calif., is introducing UV-enhanced planar diffused silicon photodiodes for electro-optical applications that call for blocking the near-infrared spectral region.

OSI Optoelectronics, an OSI Systems company in Hawthorne, Calif., is introducing UV-enhanced planar diffused silicon photodiodes for electro-optical applications that call for blocking the near-infrared spectral region. Designed for low-light detection in the ultraviolet spectral range, these products include UVD planar diffused and UVE planar diffused IR suppressed devices. OSI Optoelectronics' UVD photodiodes peak at 970 nanometers, and the UVE devices peak at 720 nanometers and suppress the near-infrared. Both can be biased for low capacitance, wide dynamic range, and high-speed response. Alternatively, the UVD and UVE series may be operated in the photovoltaic (unbiased) mode for situations that require low drift with temperature variations.

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