Microwave power devices unveiled for radar

Philips Semiconductors in Sunnyvale, Calif., is offering a new family of silicon bipolar microwave power transistors for S-band pulsed radars. These devices include a 110-watt transistor with the 400 MHz bandwidth necessary to cover the 2.7 GHz to 3.1 GHz frequency range. The BLS2731 family consists of four transistors with minimum pulse power handling of between 10 and 110 watts. The 10-, 20-, and 50-watt devices have typical power gain of 8 decibels and typical collector efficiencies of 40 per

Philips Semiconductors in Sunnyvale, Calif., is offering a new family of silicon bipolar microwave power transistors for S-band pulsed radars. These devices include a 110-watt transistor with the 400 MHz bandwidth necessary to cover the 2.7 GHz to 3.1 GHz frequency range. The BLS2731 family consists of four transistors with minimum pulse power handling of between 10 and 110 watts. The 10-, 20-, and 50-watt devices have typical power gain of 8 decibels and typical collector efficiencies of 40 percent from 2.7 to 3.1 GHZ. The 110-watt devices have 7-decibel gain and more than 35 percent efficiency. For more information, contact Philips by phone at 800-447-1500, ext. 1412, or on the World Wide Web at http://www. semiconductors.philips.com/. - J.K.

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