Silicon carbide transistor with 2,200 Watts of peak RF power for UHF pulse radar introduced by Microsemi

SUNNYVALE, Calif., 31 July 2010. The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC) transistor with 2,200 Watts of peak RF power for high power UHF band pulsed radar applications. The 0405SC-2200M transistor is a generation 3 chip in its geometry, materials, processing, and packaging, Microsemi officials say. It is designed in one-ended package for common gate 2,200 Watt Class AB performance in the UHF frequencies from 406 MHz to 450 MHz.

Jul 31st, 2010
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SUNNYVALE, Calif., 31 July 2010. The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC) transistor with 2,200 Watts of peak RF power for high power UHF band pulsed radar applications.

The 0405SC-2200M transistor is a generation 3 chip in its geometry, materials, processing, and packaging, Microsemi officials say. It is designed in one-ended package for common gate 2,200 Watt Class AB performance in the UHF frequencies from 406 MHz to 450 MHz for UHF pulsed radar.

A hermetically sealed package built with high temperature gold metallization and wires provides reliability and improved system yields. Additional system benefits include simplified impedance matching, a 125 volt operating voltage, low conducting current, and high peak power for reduced system power.

Microsemi RFIS is the former Endwave Corp. Defense Electronics and Security (D&S) business. For more information contact Microsemi RFIS online at www.microsemi-rfis.com.

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