Raytheon Integrated Defense System gallium nitride chips achieve operational milestone

TEWKSBURY, Mass., 1 Sept. 2009. Raytheon Company's gallium nitride (GaN) chips have achieved 1,000 hours of reliable operation. The company is positioning GaN technology as the standard for next-generation radar capability for defense systems.

TEWKSBURY, Mass., 1 Sept. 2009. Raytheon Company's gallium nitride (GaN) chips have achieved 1,000 hours of reliable operation. The company is positioning GaN technology as the standard embedded computing technology for next-generation radar capability for defense systems.

GaN technology provides increased reliability and efficiency, resulting in lower prime power consumption and relaxed cooling requirements. GaN T/R modules provide higher long-pulse radio-frequency (RF) power than that of standard gallium arsenide (GaAs) T/R modules, says a representative.

Raytheon engineers demonstrated the reliable operation of a GaN power amplifier microwave monolithic integrated circuit (MMIC) operating for more than 1,000 hours with no measurable performance degradation.

"This milestone enables us to insert GaN next generation capability into a multitude of air and missile defense programs," says Pete Franklin, vice president for Raytheon Integrated Defense Systems' National & Theater Security Programs. "GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield. Its ability to run more efficiently than other technologies will help solve many of our customers' logistical concerns."

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