LYON, France, 14 June 2008. The market for gallium nitride (GaN) RF power transistors could reach $100 million by 2010, according to analysts at market researcher Yole Developpement in Lyon, France.
Driving growth in the GaN RF transistor amplifier market is a steady increase in the need for high power RF transistors and high frequency transistors for wireless telecommunications applications, Yole analysts say in a new market study entitled GaN RF Market Analysis.
The report analyzes the applications for GaN RF transistors, and describes the main devices in production or under development as well as the possible alternative substrates that will help to decrease the device price.
Up to 2005, silicon laterally diffused metal oxide semiconductor technology (Si LDMOS) covered about 90 percent of high-power RF amplification applications in the 2 GHz and higher frequency range; the 10 percent remaining market share came from gallium arsenide pseudomorphic high electron mobility transistor GaAs pHEMT technology, Yole analysts say.
For more information contact Yole Developpement online at www.yole.fr.
