Navy researchers choose RF Micro Devices to improve gallium nitride power electronics technology

GREENSBORO, N.C., 31 Oct. 2010. Scientists in the U.S. Office of Naval Research (ONR) in Arlington, Va., needed gallium nitride (GaN) microelectronics work that includes developing materials, device fabrication, and high power circuits. They found their solution from RF Micro Devices in Greensboro, N.C.

Oct 31st, 2010

GREENSBORO, N.C., 31 Oct. 2010. Scientists in the U.S. Office of Naval Research (ONR) in Arlington, Va., needed gallium nitride (GaN) microelectronics work that includes developing materials, device fabrication, and high power circuits. They found their solution from RF Micro Devices in Greensboro, N.C.

ONR awarded RF Micro Devices (Nasdaq:RFMD) a $1.5 million research and development contract for power electronics work to improve GaN technology, which "offers unprecedented performance advantages to advanced military applications, including radar, mobile communication and electronic warfare (EW) systems," says Jeff Shealy, vice president and general manager of the RF Micro Devices (RFMD) Defense and Power business unit.

In addition to military systems, RFMD's GaN RF power technology delivers enhanced performance in commercial power amplifier applications, including private mobile radio, 3G/LTE wireless infrastructure, and CATV transmission networks, company officials say.

For more information contact RF Micro Devices online at www.rfmd.com.

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