Rad hard GaN Devices

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April 29, 2026
Courtesy of Infineon Technologies AG
Rad hard GaN Devices

Unlock the full potential of your space applications with Infineon IR HiRel's cutting-edge, rad hard GaN transistors. Designed to deliver unparalleled efficiency, power density, and switching frequencies, our GaN FETs enable you to create smaller, lighter, and more reliable power management and distribution systems. With the added assurance of DLA qualification, you can trust our technology to perform in even the most demanding high-performance space environments.

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