Leaders of TEMIC Semiconductors in Nantes, France, are introducing a radiation-tolerant 128K-by-8 1-megabit static random access memory for high-reliability space systems that must resist total-dose radiation of as much as 30 kilorads, yet that consume low amounts of power. The TEMIC SRAM, built on a Qualified Manufacturing List 0.6-micron process is the space version of TEMIC`s 65608 SRAM that has 30 nanoseconds access time and power consumption of 1 microamp typical standby circuit. This memor
Leaders of TEMIC Semiconductors in Nantes, France, are introducing a radiation-tolerant 128K-by-8 1-megabit static random access memory for high-reliability space systems that must resist total-dose radiation of as much as 30 kilorads, yet that consume low amounts of power. The TEMIC SRAM, built on a Qualified Manufacturing List 0.6-micron process is the space version of TEMIC`s 65608 SRAM that has 30 nanoseconds access time and power consumption of 1 microamp typical standby circuit. This memory, which measures 400 mils wide, comes in 3- or 5-volt versions. The device comes in a 32-pin ceramic or plastic package, and is available in die form. For more information, contact TEMIC`s Veronique Sablereau by phone at +33-1-30-60-70-68, by fax at +33-1-30-60-70-06, or on the World Wide Web at http://www.temic.de/semi. - J.K.
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