IRVINE, Calif. – Fairview Microwave Inc. in Irvine, Calif., is introducing a series of Class AB broadband high-power amplifier modules for applications that need a high power, small-form-factor RF amplifier.
The power electronics devices incorporate gallium nitride (GaN), laterally-diffused metal-oxide semiconductor (LDMOS), or vertical double-diffused metal oxide semiconductor field effect transistor (VDMOS) semiconductor technology.
These devices consist of 18 new models spanning frequency bands from 20 MHz to 18 GHz. These designs are stable and operate in a 50 Ohm environment.
These small-form-factor power electronics devices offer power gain to 53 decibels and saturated output power levels from 10 Watts to 200 Watts. This line includes two heatsink modules with DC controlled cooling fans to maintain baseplate temperature.
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These compact coaxial packages use N-type or SMA connectors and have integrated D-sub control connectors for DC bias, enabled with TTL logic control and temperature and current sense functions.
The rugged assemblies can withstand relative humidity exposure to 95 percent maximum and operate over a wide temperature range from -20 to 60 degrees Celsius.
For more information contact Fairview Microwave online at www.fairviewmicrowave.com.
