Radiation-hardened power MOSFET for space applications on military satellites qualified by Microchip

July 6, 2021
Microchip's rad-hard M6 MRH25N12U3 silicon transistor withstands extreme space environments and extends reliability of power circuitry

CHANDLER, Ariz. – Microchip Technology Inc. in Chandler, Ariz., has qualified the company's radiation-hardened M6 MRH25N12U3 MOSFET for power electronics applications on commercial and military satellites.

Space power supplies operate in environments that require enhanced radiation technology to withstand extreme particle interactions and solar and electromagnetic events. These events degrade space-based systems and disrupt operations.

To meet this requirement, Microchip has qualified its M6 MRH25N12U3 radiation-hardened 250-volt, 0.21 Ohm Rds(on) MOSFET for commercial aerospace and defense space applications.

Microchip's radiation-hardened M6 MRH25N12U3 MOSFET provides the primary switching element in power conversion circuits including point-of-load converters, DC-DC converters, motor drives and controls, and general-purpose switching.

Related: The evolving world of radiation-hardened electronics

The MOSFET withstands the harsh environments of space, extends reliability of power circuitry, and meets all requirements of MIL-PRF19500/746 with enhanced performance. Microchip completed testing for Defense Logistics Agency (DLA) review and qualification for the device's sourcing in the U.S. military supply chain in June.

The device can withstand total ionizing dose radiation of as much as 100 and 300 kilorads, and single event effects with linear energy transfer to 87 MeV/mg/cm2. It provides 100-percent wafer lot radiation hardness assurance in validation tests.

For more information contact Microchip online at www.microchip.com.

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