MUNICH – Infineon Technologies AG in Munich is introducing the CoolSiC 650-volt silicon carbide (SiC) metal oxide field-effect transistors (MOSFETs) for high-power applications like energy storage, battery formation, switched-mode power supplies, and motor drives.
CoolSiC MOSFETs come in a compact D 2PAK SMD 7-pin package with .XT interconnection technology, and offer switching at high currents and 80 percent lower reverse recovery charge (Q rr) and drain-source charge (Q oss) than the best silicon reference.
The reduced switching losses enable high-frequency operations in small system sizes, enabling high efficiency and power density. The trench technology is the basis for gate oxide reliability. Together with an improved avalanche and short-circuit robustness this ensures high system reliability even in harsh environments.
The SiC MOSFETs are suitable for topologies with repetitive hard commutation as well as for high temperature and harsh operations. Low on-resistance dependency with temperature show thermal behavior.
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The devices feature a wide voltage from gate to source range from -5 volts up to 23 volts and supporting 0-volt turn-off V GS and a gate-source threshold voltage greater than 4 volts. The MOSFETs works with standard MOSFET gate driver ICs.
Additionally, they support bi-directional topologies and full dv/dt controllability, offering reduced system cost and complexity, as well as ease of adoption and integration.
The .XT interconnection technology improves the package’s thermal capabilities by dissipating 30 percent extra loss, compared to a standard interconnection. For more information contact Infineon online at www.infineon.com/coolsic-mosfet-discretes.
