SAN JOSE, Calif. – Electronics distributor RFMW in San Jose, Calif., is introducing design and sales support for the QPD2025D discrete 250-Micron pseudomorphic high electron mobility transistor (pHEMT) from Qorvo in Greensboro, N.C.
The QPD2025D power electronics devices operate from DC to 20 GHz, and is designed using Qorvo's proven standard 0.25-micron power pHEMT production process.
This process features advanced techniques to optimize RF and microwave power and efficiency at high drain bias operating conditions.
The QPD2025D typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression making it appropriate for high efficiency applications.
Bias voltage is 8 volts for broadband wireless, aerospace and defense applications. For more information contact RFMW online at www.rfmw.com.