NIJMEGEN, The Netherlands – Semiconductor expert Nexperia in Nijmegen, The Netherlands, is introducing the DFN0603 package 20-volt and 30-volt metal oxide silicon field-effect transistors (MOSFETs) for small-sized power electronics applications.
The DFN0603 is one of the world's smallest DFN packages, and is for next-generation wearable computing and hearable devices with artificial intelligence (AI) and machine learning. The MOSFET uses available board space efficiently, and enables designers to add functionality and improve heat dissipation.
The small-sized DFN0603 package measures 0.63 by 0.33 by 0.25 millimeters, and uses 13 percent less space than MOSFETs in the next-smallest package (DFN0604). The RDS(on) of these devices has been reduced by 74 percent.
This new range of tiny MOSFETs includes PMX100UN 20-volt, N-channel Trench MOSFET; PMX100UNE 20-volt, N-channel Trench MOSFET with 2kV ESD protection (HBM); PMX300UNE 30-volt, N-channel Trench MOSFET; and PMX400UP 20-volt, P-channel Trench MOSFET.
Samples are available now. For more information contact Nexperia online at www.nexperia.com.