Power gate driver IC for gallium nitride (GaN) devices in high-speed switching introduced by ROHM

Dec. 13, 2023
Device achieves gate drive speeds of nanoseconds, and offers minimum gate input pulse width of 1.25 nanoseconds that contributes to energy efficiency.

KYOTO, Japan – ROHM Semiconductor in Kyoto, Japan, is introducing the BD2311NVX-LB gate driver IC for gallium nitride (GaN) devices in high-speed switching.

The device achieves gate drive speeds of nanoseconds. It offers a minimum gate input pulse width of 1.25 nanoseconds that contributes to small energy-efficient applications.

Improving power conversion efficiency while reducing the size of power supply units in server systems have become important factors as the number of IoT devices continues to grow. This requires further advancements in the power device sector.

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At the same time, light direction and ranging (LiDAR) applications not only are for autonomous driving but also for industrial monitoring and social infrastructure. This demands high-speed pulsed laser light to further increase recognition accuracy.

ROHM developed an ultra-high-speed gate driver IC that makes the most of GaN performance, and is releasing small wafer-level chip-scale packages.

As GaN devices are sensitive towards gate input overvoltage, ROHM has developed a unique method to suppress the gate voltage overshoots and has implemented it into this driver. In addition, the optimum GaN device can be selected by adjusting the gate resistance based on application requirements.

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ROHM also offers a lineup of GaN devices under the EcoGaN name, contributing to a sustainable society through power solutions when combined with gate driver ICs that maximize their performance.

The gate driver BD2311NVX-LB with the unique gate overvoltage suppression feature, when used with ROHM's EcoGaN products, further simplifies design and enhances application reliability.

For more information contact ROHM Semiconductor online at www.rohm.com.

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