WEST PALM BEACH, Fla. – Solitron Devices Inc. in West Palm Beach, Fla., is introducing the SD11487 hermetically sealed silicon carbide (SiC) power module for high-reliability applications in avionics, space, and down-hole exploration.
The 51-by-30-by-8-millimeter outline is a small hermetically sealed high reliability, high voltage, half-bridge that makes the most of power density while minimizing loop inductance.
60-mil pins for the power output stage are isolated on one side of the package for simple power busing while 30-mil pins on the opposite side control signals.
The SD11487 is a half bridge configuration with two 1200-volt SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). Also included in the module are two freewheeling 1200-volt SiC Schottky diodes in parallel with the MOSFETs and an integrated negative temperature coefficient (NTC) temperature sensor. Continuous drain current is 95 amps.
With operating temperatures of -55 to 175 degrees Celsius, the SD11487 comes in a hermetically sealed copper package combined with the alumina nitride direct bond copper substrate that provide thermal conductivity as well as case isolation. Integrated temperature sensing enables high-temperature protection.
Silicon Carbide provides better switching performance than silicon MOSFETs and insulated-gate bipolar transistors (IGBTs) with minimal variation versus temperature, Solitron officials say.
For more information contact Solitron Devices online at https://solitrondevices.com.