Gallium nitride (GaN)-based power conversion devices for industrial uses introduced by STMicro

Summary points:

• STMicroelectronics introduces the MasterGaN6, a compact GaN-based power stage in a chip that integrates transistors, driver, and protection into a single device.
• The IC features 650-volt GaN transistors, 10-amp capability, and fast switching speeds to deliver higher efficiency and reduced component count compared to traditional designs.
• Designed for industrial power supplies, LED lighting, and solar micro-inverters, MasterGaN6 helps shrink system size while simplifying power conversion design.

GENEVA – STMicroelectronics in Geneva is introducing the MasterGaN6 power integrated circuit for power conversion systems. It has gallium nitride (GaN) power transistors and is for industrial-lighting power supplies, and DC-to-AC solar micro-inverters.

The MasterGaN6 is a power stage in a chip that combines several components for switching power supplies into one small package. The GaN half-bridge power IC combines two GaN power transistors; a high-voltage gate driver; built-in protection; and control features into one system-in-package device.

Features of these power conversion devices include 650-volt GaN transistors; the ability to handle 10-amp current; and integrated gate driver, bootstrap diode, linear regulators, thermal shutdown and undervoltage protection, and fast switching speeds.

Integrated design

While traditional power supplies use many separate parts like MOSFETs, drivers, and protection circuits, MasterGaN6 integrates all of these to reduce component count, shrink circuit board size, improve efficiency, and simplify design.

Typical applications include industrial power supplies, LED lighting drivers, solar micro-inverters, and laptop and phone chargers. MasterGaN6 enlarges the feature count by including dedicated pins for fault indication and standby functionality.

For more information contact STMicroelectronics online at www.st.com/en/power-management/mastergan6.html.