MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BMPC9X89X8-8000 gallium nitride (GaN) RF and microwave amplifier for X-Band rugged pulsed radar applications.
The AB linear design operates in the 9 to 9.9 GHz frequency range over any instantaneous bandwidth of 500 MHz. The amplifier features self protection for load voltage standing wave ratio (VSWR), duty factor, pulse width, temperature, as well as a graceful degradation in case of a RF power module failure.
Custom configurations and features of the RF and microwave amplifier for radar applications are available as well as specific power levels to 16 kilowatts.
Features include class AB GaN technology; high output power dynamic range; efficiency; RF input & output sample detectors; pulse width and duty factor protection; thermal and load VSWR protection; remote status and control Ethernet interface; ruggedized for harsh environmental applications; customization available; RF modular combining 2 to 16 kilowatts; internal AC power supply; and graceful degradation.
Related: GaN RF and microwave amplifier for X-band radar applications introduced by Comtech
Typical performance specifications are frequency range of 9.0 to 9.9 GHz; instantaneous bandwidth to 500 MHz; output power of 8000 Watts peak; power gain of 69 decibels (nominal); pulse width of 0.25 to 100 microseconds maximum; duty cycle of 10 percent maximum; pulse droop of less than or equal to 1 decibels; pulse rise and fall time of less than 50 nanoseconds (typical); input VSWR of less than 1.5:1; output load VSWR less than 1.5:1; AC voltage input of 115 volts AC; and AC power input of 2.8 kilovolt amperes maximum at 5 percent DF.
The devices operates in humidity as high as 95 percent non-condensing; withstands the effects of shock and vibration per MIL-STD-810F; operates at altitude as high as 12,000 feet; measures 19 by 12.25 by 24 inches; and weighs 90 pounds.
For more information contact Comtech PST online at www.comtechpst.com.
