Rugged GaN RF and microwave amplifier for X-band pulsed radar applications introduced by Comtech PST

Feb. 25, 2020
The amplifier has self protection for load VSWR, duty factor, pulse width, temperature, and graceful degradation in case of an RF power module failure.

MELVILLE, N.Y. – Comtech PST Corp. in Melville, N.Y., is introducing the model BMPC9X89X8-8000 gallium nitride (GaN) amplifier for rugged X-band pulsed radar applications that must operate in harsh environments.

The AB linear design operates from 9 to 9.9 GHz frequency range over any instantaneous bandwidth of 500 MHz.

The amplifier design features self protection for load voltage standing wave ratio (VSWR), duty factor, pulse width, temperature, as well as a graceful degradation in case of an RF power module failure. Custom configurations and features are available as well as specific power levels to 16 kilowatts.

Features include high-output power dynamic range; efficiency; RF input and output sample detectors; pulse width and duty factor protection; remote status/control interface via Ethernet; customization available; and internal AC power supply.

Related: Gallium nitride (GaN) amplifier for X-band radar applications introduced by Comtech PST

The GaN RF and microwave component offers peak output power of 8,000 Watts; nominal power gain of 69dB; maximum pulse width of 0.25 to 100 microseconds; maximum duty cycle of 10 percent; pulse droop of ~<1.0dB; typical pulse rise and fall time of less than 50 nanoseconds; input VSWR of less than 1.5:1; and output load VSWR of less than 1.5:1.

The device has a maximum power input of 2.8 kilovolt ampres; operating temperature of 0 to 50 degrees Celsius at the baseplate; operating humidity of 0 to 95 percent non-condensing; operating shock and vibration per Mil-Std-810F; and operating altitude of 12,000 feet. The device measures 10 by 12.25 by 24 inches, and weighs 90 pounds.

For more information contact Comtech PST online at

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