GaN pulsed RF and microwave amplifier for electronic warfare (EW) applications introduced by Empower RF

Aug. 10, 2020
Amplifier operates from 5.2 to 5.9 GHz, offers liquid cooling, and is for applications where tens and hundreds of kilowatts of power are necessary.

INGLEWOOD, Calif. – Empower RF Systems Inc. in Inglewood, Calif., is introducing the model 2225 solid-state gallium nitride (GaN) long-duty-cycle pulsed RF and microwave amplifier for electronic warfare (EW), radar, directed-energy, and satellite communications (SATCOM) applications.

The amplifier operates from 5.2 to 5.9 GHz, offers liquid cooling, and has a scalable architecture. GaN technology replaces tube technology to bring new capabilities to applications where tens and hundreds of kilowatts of continuous wave and pulse power are necessary.

This RF and microwave architecture offers scalability for affordable upgrade paths to future power needs by adding hardware to an existing system. Users can combine additional racks and 2U amplifier drawers without the need for tuning.

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The amplifier has a system controller in a 3U form factor, and accommodates as many as 16 hot-swappable 2U amplifier drawers with each amplifier drawer containing an integrated power supply in its 2U chassis.

This arrangement eliminates the risk of an RF section or single power supply failure. A failure only causes a fractional reduction of output power, and the amplifier system remains operational.

For more information contact Empower RF Systems online at www.empowerrf.com.

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