MOSFET power devices for space-constrained industrial applications introduced by IR

EL SEGUNDO, Calif., 7 July 2014. International Rectifier (IR) in El Segundo, Calif., is introducing a family of Large Can DirectFET MOSFET power electronics devices for industrial applications requiring ultra-low on-state resistance (Rds(on)) including high power DC motors, DC-AC inverters, and high current switching applications such as active ORing hot swap, and eFuse.

Jul 7th, 2014
MOSFET power devices for space-constrained industrial applications introduced by IR
MOSFET power devices for space-constrained industrial applications introduced by IR
EL SEGUNDO, Calif., 7 July 2014. International Rectifier (IR) in El Segundo, Calif., is introducing a family of Large Can DirectFET MOSFET power electronics devices for industrial applications requiring ultra-low on-state resistance (Rds(on)) including high power DC motors, DC-AC inverters, and high current switching applications such as active ORing hot swap, and eFuse.

The 7-by-9-by-0.7-millimeter Large Can MOSFET devices provide Rds(on) performance leading to lower conduction losses and improved system efficiency, company officials say.

Similar to Small and Medium Can DirectFET devices, the Large Can provides dual-side cooling that can make the most of thermal transfer and help increase power density.

DirectFET also has the optimum die-to-footprint ratio, leading to a reduction in board space. Combined with its low profile, it is a solution for space-constrained, high-power industrial power designs.

As with the entire DirectFET family, the industrial Large Can has wire bond-free construction for improving reliability performance. Moreover, the DirectFET package meets all RoHS requirements such as a lead-free bill of materials, and is, therefore, suited for long lifecycle designs. Alternative high performance packages have lead die attach under RoHS exemption 7(a) which is due to expire in 2016.

For more information contact International Rectifier online at www.irf.com.

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