TEWKSBURY, Mass., 31 Aug. 2009.Gallium nitride (GaN) chips from Raytheon (NYSE: RTN) achieved 1,000 hours of reliable operation, moving the technology closer as a standard for next generation radar.
Raytheon engineers have demonstrated the reliable operation of a GaN power amplifier microwave monolithic integrated circuit (MMIC) operating for more than 1,000 hours with no measurable performance degradation.
GaN technology provides increased reliability and efficiency, resulting in lower prime power consumption and relaxed cooling requirements, Raytheon officials say. Thus, GaN T/R modules provide significantly higher long-pulse radio frequency (RF) power than that of standard gallium arsenide (GaAs) T/R modules.
"This milestone enables us to insert GaN next generation capability into a multitude of air and missile defense programs," says Pete Franklin, vice president for Raytheon Integrated Defense Systems' National & Theater Security Programs. "GaN will also give the warfighter significantly more mobility, capability, and reliability on the battlefield. Its ability to run more efficiently than other technologies will help solve many of our customers' logistical concerns."
