MANSFIELD, Texas, 16 Jan. 2017. Electronics distributor Mouser Electronics Inc. in Mansfield, Texas, is offering QPD gallium nitride (GaN) RF transistors from Qorvo in Greensboro, N.C., for infrastructure, defense and aerospace applications such as radar, electronic warfare (EW), communications, navigation, and similar applications.
Built on Qorvo's GaN on silicon carbide (SiC) technology, these high-electron-mobility transistors (HEMTs) with a single-stage matched power amplifier transistor offer a wide array of frequency ranges, output power, and operating voltages for high-efficiency applications.
GaN technology supports RF power densities between five and six times higher than gallium arsenide-based RF amplifiers. This increase in performance capability offers designers the flexibility to reduce board space and system costs while improving system performance.
The Qorvo QPD GaN RF transistors available from Mouser Electronics include the recently released QPD1003, the industry's first 500-Watt, L-Band power amplifier internally matched to 50 ohms.
The new QPD1003 meets the performance needs of high-power phased arrays such as Active Electronic Scanned Array (AESA) radars, which operate in the 1.2 to 1.4 GHz frequency range.
These systems require power amplifiers that operate at maximum efficiency resulting in low heat generation in demanding environmental conditions. For more information contact Mouser online at www.mouser.com.
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