Rugged 250 Watt RF and microwave transistors for industrial uses introduced by Ampleon

July 26, 2018
NIJMEGEN, The Netherlands – RF and microwave power specialist Ampleon in Nigmegen, The Netherlands, is introducing the rugged BLC2425M10LS250 high-power laterally diffused metal oxide semiconductor (LDMOS) RF power amplifier transistors for use in continuous wave (CW) RF energy applications.

NIJMEGEN, The Netherlands –RF and microwave power specialist Ampleon in Nigmegen, The Netherlands, is introducing the rugged BLC2425M10LS250 high-power laterally diffused metal oxide semiconductor (LDMOS) RF power amplifier transistors for use in continuous wave (CW) RF energy applications.

The BLC2425M10LS250 is for industrial, scientific, and medical applications. The devices achieves as much as 69 percent efficiency, and can provide as much as 250 Watts output power in the 2,400 to 2,500 MHz frequency range.

Its high efficiency helps keep the need for cooling to a minimum while also lowering the energy costs of operation. It can withstand a load mismatch of as much as 20:1 voltage standing wave ratio (VSWR).

The device is assembled in an air cavity SOT1270-1 plastic earless flanged package and has internal input/output matching and ESD protection components. This can simplify the need for additional device protection circuitry.

For more information contact Ampleon online at www.ampleon.com.

Ready to make a purchase? Search the Military & Aerospace Electronics Buyer's Guide for companies, new products, press releases, and videos

Voice your opinion!

To join the conversation, and become an exclusive member of Military Aerospace, create an account today!